发明名称 |
SEMICONDUCTOR STRUCTURE |
摘要 |
A semiconductor structure is provided. The semiconductor structure includes a substrate, at least a first N-type germanium (Ge) structure and at least a first P-type Ge structure. The first N-type Ge structure is formed on the substrate and has two end parts and at least a first central part bonded between the two end parts thereof. The first central part is floated over the substrate, and a side surface of the first central part is a {111} Ge crystallographic surface. The first P-type Ge structure is formed on the substrate and has two end parts and at least a second central part bonded between the two end parts thereof. The side surface of the second central part is a {110} Ge crystallographic surface. |
申请公布号 |
US2014264439(A1) |
申请公布日期 |
2014.09.18 |
申请号 |
US201314010713 |
申请日期 |
2013.08.27 |
申请人 |
National Applied Research Laboratories |
发明人 |
Liu Chee-Wee;Chen Yen-Ting |
分类号 |
H01L29/04;H01L29/78;H01L29/165 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor structure, comprising:
a substrate; at least a first N-type germanium structure formed on the substrate, wherein the first N-type germanium structure comprises two end parts and at least a first central part bonded between the two end parts thereof, the first central part is floated over the substrate, and a side surface of the first central part is a {111} germanium crystallographic surface; and at least a first P-type germanium structure formed on the substrate, wherein the first P-type germanium structure comprises two end parts and at least a second central part bonded between the two end parts thereof, and a side surface of the second central part is a {110} germanium crystallographic surface. |
地址 |
Taipei City TW |