HEMT Semiconductor Device and a Process of Forming the Same

摘要

A HEMT semiconductor device can include a dielectric layer that includes a silicon nitride film and an AlN film. In an embodiment, the HEMT semiconductor device can include a GaN film and an AlGaN film. In a process of forming the HEMT device, the AlN can provide an etch stop when forming an opening for a gate electrode.

主权项

1. A HEMT semiconductor device comprising:
a substrate having a primary surface; a GaN film overlying the primary surface of the substrate; and a dielectric layer overlying the GaN film, wherein the dielectric layer includes a first silicon nitride film overlying the GaN film, and an AlN film on the first silicon nitride film.