Compensation For Temperature Dependence Of Bit Line Resistance

摘要

Techniques for sensing the threshold voltage of a memory cell during reading and verify operations by compensating for changes, including temperature-based changes, in the resistance of a bit line or other control line. A memory cell being sensed is in a block in a memory array and the block is in a group of blocks. A portion of the bit line extends between the group of blocks and a sense component and has a resistance which is based on the length/distance and the temperature. Various parameters can be varied with temperature and the group of blocks to provide the compensation, including bit line voltage, selected word line voltage, source line voltage, sense time and/or sense current or voltage.

主权项

1. A method for performing a sense operation for a non-volatile storage element in a memory device, comprising:
determining a block in which the non-volatile storage element is located, the memory device comprises a plurality of blocks and a bit line which extends from a sense component to each of the plurality of blocks, the bit line is in communication with a drain of the non-volatile storage element; and sensing a state of the non-volatile storage element while compensating for a distance-based resistance of the bit line and a temperature-based resistance, the distance-based resistance is a function of a distance of the bit line between the sense component and the block in which the non-volatile storage element is located, and the temperature-based resistance is a function of a temperature of the memory device and the distance.