CROSS TALK MITIGATION

摘要

Cross-talk is mitigated in a switching circuit. In accordance with one or more embodiments, an apparatus includes a multi-pin connector having signal-carrying electrodes that communicate with a device external to the apparatus, and respective field-effect switches that couple the signal-carrying electrodes to respective communication channels in the apparatus. The switches include a first field-effect semiconductor switch having a gate electrode adjacent a channel region that connects electrodes (e.g., source and drain regions) when a threshold switching voltage is applied to the gate, in which the electrodes are connected between one of the signal-carrying electrodes and a first channel coupled to an electrostatic discharge (ESD) circuit. A bias circuit mitigates cross-talk between the communication channels by biasing the channel region of the first field-effect semiconductor switch (in an off state) to boost the threshold switching voltage over a threshold discharge voltage of the ESD circuit.

主权项

1. An apparatus comprising:
a multi-pin connector including at least first and second signal-carrying electrodes configured and arranged to communicate with a device external to the apparatus; a first field-effect semiconductor switch having a gate electrode adjacent a channel region configured and arranged to connect first and second electrodes in response to a threshold switching voltage applied to the gate, the first and second electrodes being connected between the first signal-carrying electrode and a first channel; a second field-effect semiconductor switch connected between the second signal-carrying electrode and the first channel; an electrostatic discharge (ESD) circuit having a diode that connects the first channel and a reference voltage, the ESD circuit being configured and arranged to switch to a conducting state in response to a threshold discharge voltage on the first channel that causes the diode to shunt current; and a bias circuit configured and arranged to mitigate cross-talk between the first and second signal-carrying electrodes when the first field-effect semiconductor switch is in an off state by biasing the channel region and boosting the threshold switching voltage to a level that is greater than the ESD threshold discharge voltage, wherein the biasing mitigates passage of signals between the signal-carrying electrodes, via the first field-effect semiconductor switch.