发明名称 CYCLICAL PHYSICAL VAPOR DEPOSITION OF DIELECTRIC LAYERS
摘要 Embodiments include methods of forming dielectric layers. According to an exemplary embodiment, a dielectric layer may be formed by determining a desired thickness of the dielectric layer, forming a first dielectric sub-layer having a thickness less than the desired thickness by depositing a first metal layer above a substrate and oxidizing the first metal layer, and forming n (where n is greater than 1) additional dielectric sub-layers having a thickness less than the desired thickness above the first dielectric sub-layer by the same method of the first dielectric sub-layer so that a combined thickness of all dielectric sub-layers is approximately equal to the desired thickness.
申请公布号 US2014273425(A1) 申请公布日期 2014.09.18
申请号 US201313845385 申请日期 2013.03.18
申请人 BUSINESS MACHINES CORPORATION INTERNATIONAL;CANON ANELVA CORPORATION 发明人 Jamison Paul;Li Juntao;Paruchuri Vamsi;Vo Tuan A.;Tsunoda Takaaki;Shinde Sanjay
分类号 H01L21/02;H01L21/28 主分类号 H01L21/02
代理机构 代理人
主权项 1. A method of forming a dielectric layer, the method comprising: determining a desired thickness of the dielectric layer; forming a first dielectric sub-layer having a thickness less than the desired thickness, wherein forming the first dielectric sub-layer comprises depositing a first metal layer above a substrate and oxidizing the first metal layer; and forming n additional dielectric sub-layers, each of which having a thickness less than the desired thickness, above the first dielectric sub-layer so that a combined thickness of all dielectric sub-layers is approximately equal to the desired thickness, wherein n is a number greater than 1 and each of the additional dielectric sub-layers is formed by depositing an additional metal layer above the preceding dielectric sub-layer and oxidizing the additional metal layer.
地址 US