发明名称 |
CYCLICAL PHYSICAL VAPOR DEPOSITION OF DIELECTRIC LAYERS |
摘要 |
Embodiments include methods of forming dielectric layers. According to an exemplary embodiment, a dielectric layer may be formed by determining a desired thickness of the dielectric layer, forming a first dielectric sub-layer having a thickness less than the desired thickness by depositing a first metal layer above a substrate and oxidizing the first metal layer, and forming n (where n is greater than 1) additional dielectric sub-layers having a thickness less than the desired thickness above the first dielectric sub-layer by the same method of the first dielectric sub-layer so that a combined thickness of all dielectric sub-layers is approximately equal to the desired thickness. |
申请公布号 |
US2014273425(A1) |
申请公布日期 |
2014.09.18 |
申请号 |
US201313845385 |
申请日期 |
2013.03.18 |
申请人 |
BUSINESS MACHINES CORPORATION INTERNATIONAL;CANON ANELVA CORPORATION |
发明人 |
Jamison Paul;Li Juntao;Paruchuri Vamsi;Vo Tuan A.;Tsunoda Takaaki;Shinde Sanjay |
分类号 |
H01L21/02;H01L21/28 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming a dielectric layer, the method comprising:
determining a desired thickness of the dielectric layer; forming a first dielectric sub-layer having a thickness less than the desired thickness, wherein forming the first dielectric sub-layer comprises depositing a first metal layer above a substrate and oxidizing the first metal layer; and forming n additional dielectric sub-layers, each of which having a thickness less than the desired thickness, above the first dielectric sub-layer so that a combined thickness of all dielectric sub-layers is approximately equal to the desired thickness, wherein n is a number greater than 1 and each of the additional dielectric sub-layers is formed by depositing an additional metal layer above the preceding dielectric sub-layer and oxidizing the additional metal layer. |
地址 |
US |