发明名称 |
PARAMETERIZED CELL FOR PLANAR AND FINFET TECHNOLOGY DESIGN |
摘要 |
A parameterized cell for planar and finFET designs is provided. A parameterized cell (Pcell) describing a planar design is integrated with fin-based design criteria, including fin pitch. For material regions in a planar design that have a corresponding region in a fin design, a quantized value based on the fin pitch is computed. The material can include regions such as active area silicon, contact regions, and local interconnect regions. |
申请公布号 |
US2014282323(A1) |
申请公布日期 |
2014.09.18 |
申请号 |
US201313836057 |
申请日期 |
2013.03.15 |
申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
Jain Navneet;Mesa Paul D.;Wang Qinglei;Xiang Qi;Rashed Mahbub |
分类号 |
G06F17/50 |
主分类号 |
G06F17/50 |
代理机构 |
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代理人 |
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主权项 |
1. A method for adapting a planar design to a fin-based design, comprising:
receiving width information for a planar region; receiving a fin pitch value; and computing a quantized region width for a quantized region, based on the fin pitch value. |
地址 |
US |