| 发明名称 |
POWER OVERLAY STRUCTURE AND METHOD OF MAKING SAME |
| 摘要 |
A semiconductor device module includes a dielectric layer, a semiconductor device having a first surface coupled to the dielectric layer, and a conducting shim having a first surface coupled to the dielectric layer. The semiconductor device also includes an electrically conductive heatspreader having a first surface coupled to a second surface of the semiconductor device and a second surface of the conducting shim. A metallization layer is coupled to the first surface of the semiconductor device and the first surface of the conducting shim. The metallization layer extends through the dielectric layer and is electrically connected to the second surface of the semiconductor device by way of the conducting shim and the heatspreader. |
| 申请公布号 |
US2014264800(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201313897685 |
申请日期 |
2013.05.20 |
| 申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
Gowda Arun Virupaksha;McConnelee Paul Alan;Chauhan Shakti Singh |
| 分类号 |
H01L23/495;H01L23/00 |
主分类号 |
H01L23/495 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device module comprising:
a dielectric layer; a semiconductor device having a first surface coupled to the dielectric layer; a conducting shim having a first surface coupled to the dielectric layer; an electrically conductive heatspreader having a first surface coupled to a second surface of the semiconductor device and a second surface of the conducting shim; and a metallization layer coupled to the first surface of the semiconductor device and the first surface of the conducting shim, the metallization layer extending through the dielectric layer and electrically connected to the second surface of the semiconductor device by way of the conducting shim and the heatspreader. |
| 地址 |
Schenectady NY US |
