发明名称 |
MEMS Pressure Sensor and Microphone Devices Having Through-Vias and Methods of Forming Same |
摘要 |
A method embodiment includes providing a MEMS wafer. A portion of the MEMS wafer is patterned to provide a first membrane for a microphone device and a second membrane for a pressure sensor device. A carrier wafer is bonded to the MEMS wafer. The carrier wafer is etched to expose the first membrane and a first surface of the second membrane to an ambient environment. A MEMS structure is formed in the MEMS wafer. A cap wafer is bonded to a side of the MEMS wafer opposing the carrier wafer to form a first sealed cavity including the MEMS structure and a second sealed cavity including a second surface of the second membrane for the pressure sensor device. The cap wafer comprises an interconnect structure. A through-via electrically connected to the interconnect structure is formed in the cap wafer. |
申请公布号 |
US2014264653(A1) |
申请公布日期 |
2014.09.18 |
申请号 |
US201313955957 |
申请日期 |
2013.07.31 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Cheng Chun-Wen;Chu Chia-Hua |
分类号 |
B81C1/00;B81B3/00 |
主分类号 |
B81C1/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method for forming a micro-electromechanical (MEMS) device comprising:
providing a MEMS wafer, wherein a portion of the MEMS wafer is patterned to provide a first membrane for a microphone device and a second membrane for a pressure sensor device; bonding a carrier wafer to the MEMS wafer; etching the carrier wafer to expose the first membrane for the microphone device and to expose a first surface of the second membrane for the pressure sensor device to an ambient environment; patterning a MEMS substrate and removing portions of a first sacrificial layer of the MEMS wafer to form a MEMS structure; bonding a cap wafer having an interconnect structure to a side of the MEMS wafer opposing the carrier wafer to form a first sealed cavity including the MEMS structure and a second sealed cavity including a second surface of the second membrane for the pressure sensor device; and forming a through-via in the cap wafer, the through-via electrically connected to the interconnect structure of the cap wafer. |
地址 |
Hsin-Chu TW |