发明名称 MEMS Pressure Sensor and Microphone Devices Having Through-Vias and Methods of Forming Same
摘要 A method embodiment includes providing a MEMS wafer. A portion of the MEMS wafer is patterned to provide a first membrane for a microphone device and a second membrane for a pressure sensor device. A carrier wafer is bonded to the MEMS wafer. The carrier wafer is etched to expose the first membrane and a first surface of the second membrane to an ambient environment. A MEMS structure is formed in the MEMS wafer. A cap wafer is bonded to a side of the MEMS wafer opposing the carrier wafer to form a first sealed cavity including the MEMS structure and a second sealed cavity including a second surface of the second membrane for the pressure sensor device. The cap wafer comprises an interconnect structure. A through-via electrically connected to the interconnect structure is formed in the cap wafer.
申请公布号 US2014264653(A1) 申请公布日期 2014.09.18
申请号 US201313955957 申请日期 2013.07.31
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Cheng Chun-Wen;Chu Chia-Hua
分类号 B81C1/00;B81B3/00 主分类号 B81C1/00
代理机构 代理人
主权项 1. A method for forming a micro-electromechanical (MEMS) device comprising: providing a MEMS wafer, wherein a portion of the MEMS wafer is patterned to provide a first membrane for a microphone device and a second membrane for a pressure sensor device; bonding a carrier wafer to the MEMS wafer; etching the carrier wafer to expose the first membrane for the microphone device and to expose a first surface of the second membrane for the pressure sensor device to an ambient environment; patterning a MEMS substrate and removing portions of a first sacrificial layer of the MEMS wafer to form a MEMS structure; bonding a cap wafer having an interconnect structure to a side of the MEMS wafer opposing the carrier wafer to form a first sealed cavity including the MEMS structure and a second sealed cavity including a second surface of the second membrane for the pressure sensor device; and forming a through-via in the cap wafer, the through-via electrically connected to the interconnect structure of the cap wafer.
地址 Hsin-Chu TW