PHOTONIC DEVICES AND METHODS OF USING AND MAKING PHOTONIC DEVICES

摘要

Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 μm laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).

主权项

1. A photonic device comprising:
a substrate; a dielectric layer, disposed on the substrate, having a first refractive index; at least one dielectric strip, disposed within the dielectric layer, having a second refractive index greater than the first refractive index; and a gain layer, disposed on the dielectric layer, having a third refractive index greater than the first refractive index to guide an optical pump beam and an optical signal beam in a propagation direction parallel to a longitudinal axis of the at least one dielectric strip so as to amplify the optical signal beam via stimulated emission.