SELF-ALIGNED APPROACH FOR DRAIN DIFFUSION IN FIELD EFFECT TRANSISTORS

摘要

A method for doping terminals of a field-effect transistor (FET), the FET including a drain region, a source region, and a surround gate surrounding a channel region, the method including depositing a dopant-containing layer, such that the surround gate prevents the dopant-containing layer from contacting the channel region of the FET, the dopant-containing layer including a dopant. The dopant then diffuses the dopant from the dopant-containing layer into at least one of the drain region and source region of the FET.

主权项

1. A field-effect transistor (FET) with a drain region, a source region, and a surround gate surrounding a channel region, the FET prepared by a process comprising the steps of:
depositing a dopant-containing layer such that the surround gate prevents the dopant-containing layer from contacting the channel region of the FET, the dopant-containing layer including a dopant; and diffusing the dopant from the dopant-containing layer into at least one of the drain region and source region of the FET.