| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing current limiting, an increase in on-resistance, and an increase in inductance which are caused by wires, even if a semiconductor chip is miniaturized.SOLUTION: A semiconductor device 1 comprises: a substrate 10 having a principal surface 10a on which first, second, and third wiring patterns 11-13 are formed; and a vertical transistor chip 20 having a gate electrode 21 and a source electrode 22 on a surface 20a and having a drain electrode 23 on a back surface 20b. The transistor chip 20 is mounted on the first and second wiring patterns 11 and 12 of the substrate 10 so as to be opposed to the principal surface 10a of the substrate 10, and therefore the gate electrode 21 and the source electrode 22 are connected to the first and second wiring patterns 11 and 12 respectively, and the drain electrode 23 of the transistor chip 20 is connected to the third wiring pattern 13 of the substrate 10 through a wire 24. |
