MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND DRY ETCHING APPARATUS FOR THE SAME

摘要

A manufacturing method of a semiconductor device including arranging a compound semiconductor above a stage of a chamber, supplying an etching gas into the chamber, and generating a plasma in the chamber is provided. The compound semiconductor includes a group-III element nitride as a main component. A surface of the compound semiconductor is processed by a dry etching. Light is irradiated into the chamber during the generating of the plasma. A dry etching apparatus including a chamber including a stage, on which a compound semiconductor is mounted, and a light source irradiating light into the chamber is provided. The chamber is supplied with an etching gas. A plasma is generated in the chamber. A surface of the compound semiconductor is an object of a dry etching.

主权项

1. A manufacturing method of a semiconductor device comprising:
arranging a compound semiconductor, which includes a group-III element nitride as a main component, above a stage of a chamber; supplying an etching gas into the chamber; and generating a plasma in the chamber, so that a surface of the compound semiconductor is processed by a dry etching, wherein light is irradiated into the chamber during the generating of the plasma.