发明名称 |
METHOD AND SYSTEM FOR RAM CACHE COALESCING |
摘要 |
A system and method for coalescing data fragments in a volatile memory such as RAM cache is disclosed. The method may include storing multiple data fragments in volatile memory and initiating a single write operation to flash memory only when a predetermined number of data fragments have been received and aggregated into a single flash write command. The method may also include generating a binary cache index delta that aggregates in a single entry all of the binary cache index information for the aggregated data fragments. A memory system having a non-volatile memory, a volatile memory sized to at least store a number of data fragments equal to a physical page managed in a binary cache of the non-volatile memory, and a controller is disclosed. The controller may be configured to execute the method of coalescing data fragments into a single flash write operation described above. |
申请公布号 |
US2014281132(A1) |
申请公布日期 |
2014.09.18 |
申请号 |
US201313838582 |
申请日期 |
2013.03.15 |
申请人 |
Bundukin Marielle;Ng King Ying;Sprouse Steven T.;Wu William;Gorobets Sergey Anatolievich;Parker Liam;Bennett Alan David |
发明人 |
Bundukin Marielle;Ng King Ying;Sprouse Steven T.;Wu William;Gorobets Sergey Anatolievich;Parker Liam;Bennett Alan David |
分类号 |
G06F12/02 |
主分类号 |
G06F12/02 |
代理机构 |
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代理人 |
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主权项 |
1. A method of storing data received from a host system, the method comprising:
in a memory device having a non-volatile memory, a volatile memory and a controller in communication with the non-volatile memory and volatile memory, the controller: receiving data fragments from the host system, each data fragment comprising an amount of data less than a physical page size managed in the non-volatile memory; storing the data fragments in the volatile memory as they are received; upon receiving a predetermined number of the data fragments, aggregating the predetermined number of data fragments into a single write command having a second amount of data equal to the physical page size managed in the flash memory; and writing the second amount of data in the single write command to the non-volatile memory. |
地址 |
Hayward CA US |