| 发明名称 |
MEMORY CELL WITH REDUNDANT CARBON NANOTUBE |
| 摘要 |
A configuration for a carbon nanotube (CNT) based memory device can include multiple CNT elements in order to increase memory cell yield by reducing the times when a memory cell gets stuck at a high state or a low state. |
| 申请公布号 |
US2014264251(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201313846677 |
申请日期 |
2013.03.18 |
| 申请人 |
HONEYWELL INTERNATIONAL INC. |
发明人 |
Nelson David K.;Golke Keith W. |
| 分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A carbon nanotube based memory device comprising:
a first carbon nanotube (CNT) element; a second CNT element, wherein a first terminal of the first CNT element is connected to a first terminal of the second CNT element at a first node, and wherein a second terminal of the first CNT element is connected to a second terminal of the second CNT element at a second node. |
| 地址 |
Morristown NJ US |
