SEMICONDUCTOR DEVICE INCLUDING LATERAL DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR

摘要

A semiconductor device and method of manufacturing the same are provided. A device can include an LDMOS region and a high side region on a semiconductor substrate. The device can further include an insulating region separating the LDMOS region from the high side region and the insulating region can include a plurality of second conductive type wells, a plurality of second conductive type buried layer patterns, or both.

主权项

1. A semiconductor device, comprising:
a lateral double diffused metal oxide semiconductor (LDMOS) region and a high side region formed on a semiconductor substrate; and an insulating region separating the LDMOS region from the high side region, wherein the insulating region comprises a plurality of second conductive type wells on the semiconductor substrate, a plurality of second conductive type buried layers on the semiconductor substrate, or both.