发明名称 Design propagation delay measurement device
摘要 A semiconductor integrated circuit comprises a substrate including a plurality of transistors, and a conductive line for coupling at least two of the transistors with each other, each transistor comprising a drain diffusion region, a source diffusion region, a gate region, and a test diffusion region within the substrate, the test diffusion region being electrically coupled to a metal line within the semiconductor integrated circuit for establishing an indication of the voltage at the probing diffusion region.
申请公布号 US6084267(A) 申请公布日期 2000.07.04
申请号 US19980168572 申请日期 1998.10.08
申请人 STMICROELECTRONICS, INC. 发明人 PETROSINO, GIANLUCA
分类号 G01R31/28;H01L23/544;(IPC1-7):H01L31/062;H01L31/113;H01L29/76 主分类号 G01R31/28
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