| 摘要 |
<p>PROBLEM TO BE SOLVED: To solve a problem occurring when forming thick wiring that peeling between the wiring and an insulation film tends to occur.SOLUTION: A semiconductor device comprises: a semiconductor substrate; a first insulation cap layer formed above the semiconductor substrate; an interlayer insulation film which is formed above the first insulation cap layer and includes a via hole and a trench on the via hole, in which the trench has side walls of stepped-shapes on an upper part of the via hole; a via conductor formed in the via hole; wiring which is formed in the trench and has a cross-sectional shape different from that of the via conductor; and a second insulation cap layer formed above the interlayer insulation film. In this case, the wiring on the upper part of the via hole includes a main part which is provided on the upper part of the via hole and has a first thickness, and a hang-out part which is provided across the main part and has a second thickness thinner than the first thickness and hangs over outward from a side part of the main part. A material of the interlayer insulation film is different from a material of the first insulation cap layer and a material of the second insulation cap layer.</p> |
