发明名称 IN-SITU TEMPERATURE MEASUREMENT IN A NOISY ENVIRONMENT
摘要 Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. One or more lift pins has a light pipe disposed therein to collect radiation emitted or transmitted by the substrate when the lift pin contacts the substrate surface.
申请公布号 US2014269826(A1) 申请公布日期 2014.09.18
申请号 US201414189664 申请日期 2014.02.25
申请人 Applied Materials, Inc. 发明人 WU Hanbing;SUBRAMANI Anantha K.;WANG Wei W.;HUNTER Aaron Muir
分类号 H01L21/67;G01J5/02 主分类号 H01L21/67
代理机构 代理人
主权项 1. A lift pin for a semiconductor processing chamber, the lift pin comprising a light pipe.
地址 Santa Clara CA US