| 发明名称 |
PARALLEL SHUNT PATHS IN THERMALLY ASSISTED MAGNETIC MEMORY CELLS |
| 摘要 |
A thermally assisted magnetic memory cell device includes a substrate, a first electrode disposed on the substrate, a magnetic tunnel junction disposed on the first electrode, a second electrode disposed on the magnetic tunnel junction, a conductive hard mask disposed on the second electrode and a parallel shunt path coupled to the magnetic tunnel junction, thereby electrically coupling the first and second electrodes. |
| 申请公布号 |
US2014264664(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201313800966 |
申请日期 |
2013.03.13 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Abraham David W.;De Brosse John K.;Trouilloud Philip L.;Worledge Daniel C. |
| 分类号 |
H01L43/02;H01L43/12 |
主分类号 |
H01L43/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A thermally assisted magnetic memory cell device, comprising:
a substrate; a first electrode disposed on the substrate; a magnetic tunnel junction (MTJ) disposed on the first electrode; a second electrode disposed on the MTJ; a conductive hard mask disposed on the second electrode; and a parallel shunt path coupled to the MTJ, thereby electrically coupling the first and second electrodes. |
| 地址 |
Armonk NY US |
