SEMICONDUCTOR DEVICE COMPRISING CONTACT STRUCTURES WITH PROTECTION LAYERS FORMED ON SIDEWALLS OF CONTACT ETCH STOP LAYERS

摘要

When forming semiconductor devices with contact plugs comprising protection layers formed on sidewalls of etch stop layers to reduce the risk of shorts, the protection layers may be formed by performing a sputter process to remove material from a contact region and redeposit the removed material on the sidewalls of the etch stop layers.

主权项

1. A method, comprising:
providing a device structure comprising a contact region; forming a dielectric etch stop layer above said contact region; forming a dielectric layer above said etch stop layer; etching an opening into said dielectric layer; etching said etch stop layer through said opening to expose said contact region at the bottom of said opening; and performing a sputter process to remove material from said contact region and re-deposit the removed material on the sidewall of said opening.