METHOD FOR FORMING A GATE ELECTRODE OF A SEMICONDUCTOR DEVICE, GATE ELECTRODE STRUCTURE FOR A SEMICONDUCTOR DEVICE AND ACCORDING SEMICONDUCTOR DEVICE STRUCTURE

摘要

The present disclosure provides, in some aspects, a gate electrode structure for a semiconductor device. In some illustrative embodiments herein, the gate electrode structure includes a first high-k dielectric layer over a first active region of a semiconductor substrate and a second high-k dielectric layer on the first high-k dielectric layer. The first high-k dielectric layer has a metal species incorporated therein for adjusting the work function of the first high-k dielectric layer.

主权项

1. A method for forming a gate electrode of a semiconductor device, the method comprising:
forming a first high-k dielectric layer over a first active region of a semiconductor substrate; forming a first metal-containing material on said first high-k dielectric layer; performing a first annealing process; removing said first metal-containing material for exposing said first high-k dielectric layer; and forming a second high-k dielectric layer on said first dielectric layer after performing said first annealing process.