LIGHT IRRADIATION TYPE HEAT TREATMENT APPARATUS AND HEAT TREATMENT METHOD

摘要

Four wafer pins are fixed in a chamber and spaced at intervals of 90 degrees. Four support pins are provided in a wafer pocket of a susceptor and spaced at intervals of 90 degrees. The four wafer pins and the four support pins are disposed concyclically in an alternating manner at intervals of 45 degrees. When halogen lamps irradiate a semiconductor wafer with light to heat the semiconductor wafer, the susceptor is moved upwardly and downwardly, so that the semiconductor wafer is shifted between the wafer pins and the support pins. This eliminates the occurrence of a problem such that the quartz pins which are relatively low in temperature are continuously kept in contact with particular places of the semiconductor wafer to improve the uniformity of the in-plane temperature distribution of the semiconductor wafer.

主权项

1. A heat treatment apparatus for heating a substrate by irradiating the substrate with light, comprising:
a chamber for receiving a substrate therein; a plurality of first support pins for supporting the substrate in said chamber; a susceptor having a plurality of second support pins and for holding the substrate in said chamber; a continuously lighted lamp for irradiating the substrate received in said chamber with light to heat the substrate; a lifting drive for moving said susceptor upwardly and downwardly relative to said first support pins; and a controller configured to control said lifting drive so that a first state and a second state are alternately repeated when the substrate is heated by the irradiation with light from said continuously lighted lamp, said first state being such that said susceptor is in a relatively lowered position so that said first support pins protrude above said second support pins to support said substrate, said second state being such that said susceptor is in a relatively raised position so that said second support pins lie above said first support pins to support said substrate.