| 发明名称 |
ISOLATION STRUCTURE |
| 摘要 |
A structure comprises a p-type substrate, a deep n-type well and a deep p-type well. The deep n-type well is adjacent to the p-type substrate and has a first conductive path to a first terminal. The deep p-type well is in the deep n-type well, is separated from the p-type substrate by the deep n-type well, and has a second conductive path to a second terminal. A first n-type well is over the deep p-type well. A first p-type well is over the deep p-type well. |
| 申请公布号 |
US2014264618(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201414177451 |
申请日期 |
2014.02.11 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YU Shu-Jenn;HSIEH Meng-Wei;YANG Shih-Hsien;TSENG Hua-Chou;CHAO Chih-Ping |
| 分类号 |
H01L29/06;H01L21/761 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A structure comprising:
a p-type substrate; a deep n-type well adjacent to the p-type substrate and having a first conductive path to a first terminal; a deep p-type well
in the deep n-type well,separated from the p-type substrate by the deep n-type well, andhaving a second conductive path to a second terminal; a first n-type well over the deep p-type well; and a first p-type well over the deep p-type well. |
| 地址 |
Hsinchu TW |
