| 发明名称 |
CHALCOGENIDE MATERIAL AND METHODS FOR FORMING AND OPERATING DEVICES INCORPORATING THE SAME |
| 摘要 |
Embodiments disclosed herein may relate to a memory cell comprising a chalcogenide material mixture having a chalcogenide composition and a metallic glass-forming composition. |
| 申请公布号 |
US2014268991(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201313829754 |
申请日期 |
2013.03.14 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
Hu Yongjun J.;Collins Dale W.;McTeer Everett A. |
| 分类号 |
H01L45/00;G11C13/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An electronic device comprising:
a first electrode; a second electrode; and a chalcogenide material mixture disposed between the first and second electrodes, the chalcogenide material mixture comprising a chalcogenide composition intermixed with a metallic glass-forming composition. |
| 地址 |
Boise ID US |
