Lithography and Mask for Resolution Enhancement

摘要

A lithography process in a lithography system includes loading a mask having multiple mask states and having a mask pattern consisting of a plurality of polygons and a field. Different mask states are assigned to adjacent polygons and the field. The lithography process further includes configuring an illuminator to generate an illumination pattern on an illumination pupil plane of the lithography system; configuring a pupil filter on a projection pupil plane of the lithography system with a filtering pattern determined according to the illumination pattern; and performing an exposure process to a target with the illuminator, the mask, and the pupil filter. The exposure process produces diffracted light and non-diffracted light behind the mask and the pupil filter removes most of the non-diffracted light.

主权项

1. A lithography process in a lithography system, comprising:
loading a mask having multiple mask states and having a mask pattern consisting of a plurality of polygons and a field, wherein different mask states are assigned to adjacent polygons and the field; configuring an illuminator to generate an illuminating pattern on an illumination pupil plane of the lithography system; configuring a pupil filter on a projection pupil plane of the lithography system with a filtering pattern determined according to the illumination pattern; and performing an exposure process to a target with the illuminator, the mask, and the pupil filter, wherein the exposure process produces diffracted light and non-diffracted light behind the mask and the pupil filter removes most of the non-diffracted light.