发明名称 NON-VOLATILE SEMICONDUCTOR STORAGE APPARATUS
摘要 According to one embodiment, apparatus includes non-volatile memory chips, and a first controller which executes processing for reading first valid data stored in a first storage region of a first non-volatile memory chip in the non-volatile memory chips, processing for storing the first valid data in a buffer memory, processing for writing the first valid data stored in the buffer memory in a second storage region of the first non-volatile memory chip, and processing for erasing data stored in the first storage region. Each of the non-volatile memory chips comprises erase blocks. Each erase block includes write blocks. Each of the first storage region and the second storage region includes at least one erase block.
申请公布号 US2014281160(A1) 申请公布日期 2014.09.18
申请号 US201313957833 申请日期 2013.08.02
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 Suzuki Riki;Asami Shohei;Hida Toshikatsu;Yao Hiroshi;Fukutomi Kazuhiro
分类号 G06F12/02 主分类号 G06F12/02
代理机构 代理人
主权项 1. A non-volatile semiconductor storage apparatus comprising: a plurality of non-volatile memory chips, wherein each of the non-volatile memory chips comprises a plurality of erase blocks, and each erase block comprises a plurality of write blocks; a buffer memory; and a first controller configured to execute processing for reading first valid data stored in a first storage region of a first non-volatile memory chip in the non-volatile memory chips, processing for storing the first valid data in the buffer memory, processing for writing the first valid data stored in the buffer memory in a second storage region of the first non-volatile memory chip, and processing for erasing data stored in the first storage region, wherein the first storage region corresponds to a first management region, the second storage region corresponds to a second management region, and each of the first storage region and the second storage region includes at least one erase block.
地址 Minato-ku JP