发明名称 |
NON-VOLATILE SEMICONDUCTOR STORAGE APPARATUS |
摘要 |
According to one embodiment, apparatus includes non-volatile memory chips, and a first controller which executes processing for reading first valid data stored in a first storage region of a first non-volatile memory chip in the non-volatile memory chips, processing for storing the first valid data in a buffer memory, processing for writing the first valid data stored in the buffer memory in a second storage region of the first non-volatile memory chip, and processing for erasing data stored in the first storage region. Each of the non-volatile memory chips comprises erase blocks. Each erase block includes write blocks. Each of the first storage region and the second storage region includes at least one erase block. |
申请公布号 |
US2014281160(A1) |
申请公布日期 |
2014.09.18 |
申请号 |
US201313957833 |
申请日期 |
2013.08.02 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
Suzuki Riki;Asami Shohei;Hida Toshikatsu;Yao Hiroshi;Fukutomi Kazuhiro |
分类号 |
G06F12/02 |
主分类号 |
G06F12/02 |
代理机构 |
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代理人 |
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主权项 |
1. A non-volatile semiconductor storage apparatus comprising:
a plurality of non-volatile memory chips, wherein each of the non-volatile memory chips comprises a plurality of erase blocks, and each erase block comprises a plurality of write blocks; a buffer memory; and a first controller configured to execute processing for reading first valid data stored in a first storage region of a first non-volatile memory chip in the non-volatile memory chips, processing for storing the first valid data in the buffer memory, processing for writing the first valid data stored in the buffer memory in a second storage region of the first non-volatile memory chip, and processing for erasing data stored in the first storage region, wherein the first storage region corresponds to a first management region, the second storage region corresponds to a second management region, and each of the first storage region and the second storage region includes at least one erase block. |
地址 |
Minato-ku JP |