发明名称 |
SEMICONDUCTOR CHIP WITH POWER GATING THROUGH SILICON VIAS |
摘要 |
A semiconductor chip includes a substrate having a frontside and a backside coupled to a ground. The chip includes a circuit in the substrate at the frontside. A through silicon via (TSV) having a front-end, a back-end, and a lateral surface is included. The back-end and lateral surface of the TSV are in the substrate, and the front-end of the TSV is substantially parallel to the frontside of the substrate. The chip also includes an antifuse material deposited between the back-end and lateral surface of the TSV and the substrate. The antifuse material insulates the TSV from the substrate. The chip includes a ground layer insulated from the substrate and coupled with the TSV and the circuit. The ground layer conducts a program voltage to the TSV to cause a portion of the antifuse material to migrate away from the TSV, thereby connecting the circuit to the ground. |
申请公布号 |
US2014264332(A1) |
申请公布日期 |
2014.09.18 |
申请号 |
US201313803895 |
申请日期 |
2013.03.14 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Erickson Karl R.;Paone Phil C.;Paulsen David P.;Sheets, II John E.;Uhlmann Gregory J.;Williams Kelly L. |
分类号 |
H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor chip comprising:
a semiconductor substrate having a frontside surface and a backside surface, the backside surface being coupled to a ground; a functional circuit in the semiconductor substrate at the frontside surface, the functional circuit electrically isolated from the semiconductor substrate; a through silicon via (TSV) having a front-end surface, a back-end surface, and a lateral surface, the back-end surface and lateral surface of the TSV being in the semiconductor substrate, and the front-end surface of the TSV being substantially parallel to the frontside surface of the semiconductor substrate; an antifuse material deposited between the back-end and lateral surfaces of the TSV and the semiconductor substrate, the antifuse material being configured to insulate the TSV from the semiconductor substrate; and a functional ground layer insulated from the semiconductor substrate, and electrically coupled with the TSV, and the functional circuit, wherein the functional ground layer is configured to conduct a program voltage to the TSV to cause a portion of the antifuse material to migrate away from the TSV, thereby electrically connecting the functional circuit to the ground. |
地址 |
Armonk NY US |