Microwave Surface-Wave Plasma Device

摘要

A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electric field may interact with process gas in the processing chamber to generate plasma for treating the substrate. The interior cavity may be isolated from the process chamber by a dielectric component that covers the continuous slit. The power transmission element may be used to control plasma density within the process chamber, either by itself or in combination with other plasma sources.

主权项

1. A plasma processing system comprising,
a power transmission element comprising more than one opening along one side of the power transmission element; a power source that can provide a power signal to the power transmission element that enables the system to generate a plasma; and a dielectric component arranged to cover each of the more than one openings in the power transmission element and is configured to transmit at least a portion of the power signal received through the more than one openings.