| 摘要 |
<p>The present invention relates to an atomic layer deposition device. The atomic layer deposition device comprises a chamber having an internal processing space; a gas supply part arranged on the upper part of the processing space, and having multiple processing gas supply units formed in the shape of a bar to supply processing gas downward; and a stage supporting a deposited substrate in the lower part of the gas supply part, and installed to be horizontally movable. Each processing gas supply unit comprises a processing gas spraying part for spraying the processing gas via a spraying path in which a plate for reducing the processing speed of the processing gas is arranged; and a processing gas suction part installed close to the processing gas spraying part to suck the processing gas not involved in the deposition. Thus, the present invention can drastically reduce the time required for a deposition process by successively performing the deposition process while the gas supply part and the substrate are relatively moved, and can apply an atomic layer deposition method to the deposition of the large substrate since the gas supply part is composed of the multiple bar-shaped gas supply units.</p> |
