2T and flash memory array

摘要

A flash memory array includes memory sectors of two transistors (2T) AND memory cells (S(1,1,1), A(1,1,1) transistors). Within each of the memory sectors (104-1, 104-2), a row of sector selection transistors (SSTL1, SSTL2) is configured such that writing data onto a memory column within the memory sector is controlled by applying a voltage to a bit line (BL1, BL2, BL3), independent from the row of sector selection transistors.