发明名称 THERMALLY ACTIVATED MAGNETIC AND RESISTIVE AGING
摘要 <p>Examples of the present invention include apparatus and methods for monitoring aging of an item. A solid-state structure is located within, adjacent to, or otherwise proximate the item, the solid-state structure including nanostructures. The electrical resistance and/or magnetization of the solid-state structure is determined to determine the degree of aging of the item. In representative examples, the solid-state structure includes nanostructures of a metal, such as a ferromagnetic metal, within a non-magnetic matrix, such as a semimetal, semiconductor, or insulator.</p>
申请公布号 EP2697660(A4) 申请公布日期 2014.09.17
申请号 EP20120770711 申请日期 2012.04.13
申请人 INDIANA UNIVERSITY OF PENNSYLVANIA 发明人 KENNING, GREGORY, G.
分类号 G01R31/00;G01N27/04;G01N27/72 主分类号 G01R31/00
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