发明名称 EROSION RESISTANCE ENHANCED QUARTZ USED IN PLASMA ETCH CHAMBER
摘要 <p>A method of fabricating doped quartz component is provided herein. In one embodiment, the doped quartz component is a yttrium doped quartz ring configured to support a substrate. In another embodiment, the doped quartz component is a yttrium and aluminum doped cover ring. In yet another embodiment, the doped quartz component is a yttrium, aluminum and nitrogen containing cover ring.</p>
申请公布号 KR101440864(B1) 申请公布日期 2014.09.17
申请号 KR20097024236 申请日期 2008.04.16
申请人 发明人
分类号 H01L21/00;H01L21/3065 主分类号 H01L21/00
代理机构 代理人
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