| 摘要 |
A semiconductor light emitting element (110, 111, 112, 113, 114, 115, 116, 117) includes a stacked body (SB), a first metal layer (51), and a second metal layer (52). The stacked body (SB) includes a first semiconductor layer (10), a second semiconductor layer (20), and a light emitting layer (30). The second semiconductor layer (20) is separated from the first semiconductor layer (10) in a first direction. The light emitting layer (30) is provided between the first semiconductor layer (10) and the second semiconductor layer (20). The first metal layer (51) is stacked with the stacked body (SB) in the first direction to be electrically connected to one selected from the first semiconductor layer (10) and the second semiconductor layer (20). The first metal layer (51) has a side surface (51s) extending in the first direction. The second metal layer (52) covers at least a portion of the side surface (51s) of the first metal layer (51). A reflectance of the second metal layer (52) is higher than a reflectance of the first metal layer (51). |
