发明名称 |
Semiconductor wafer with a layer of AlzGa1-zN and process for producing it |
摘要 |
<p>The invention concerns a semiconductor wafer comprising the following layers in the given order:
- a monocrystalline substrate wafer (1) consisting essentially of silicon and having a (111) surface orientation,
- a monocrystalline layer (3) of Sc 2 O 3 having a (111) surface orientation,
- a monocrystalline layer (4) of ScN having a (111) surface orientation, and
- a monocrystalline layer (6) of Al z Ga 1-z N with 0 ‰¤ z ‰¤ 1 having a (0001) surface orientation. The invention also concerns a process for producing this semiconductor wafer.</p> |
申请公布号 |
EP2779213(A1) |
申请公布日期 |
2014.09.17 |
申请号 |
EP20130158844 |
申请日期 |
2013.03.12 |
申请人 |
SILTRONIC AG;IHP GMBH-INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS / LEIBNIZ-INSTITUT FÜR INNOVATIVE MIKROELEKTRONIK |
发明人 |
THAPA, SARAD BAHADUR;SCHRÖDER, THOMAS;TARNAWSKA, LIDIA |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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