| 摘要 |
Provided are a semiconductor device in which abrasive grain marks are formed in a surface of a semiconductor substrate, a dopant diffusion region has a portion extending in a direction which forms an angle included in a range of -5° to +5° with a direction in which the abrasive grain marks extend, and the dopant diffusion region is formed by diffusing a dopant from a doping paste placed on one surface of the semiconductor substrate; and a method for manufacturing the semiconductor device. |
