发明名称 Copper nanowire production for interconnect applications
摘要 A method of fabricating metallic Cu nanowires with lengths up to about 25 μm and diameters in a range 20-100 nm, or greater if desired. Vertically oriented or laterally oriented copper oxide structures (CuO and/or Cu2O) are grown on a Cu substrate. The copper oxide structures are reduced with 99+ percent H or H2, and in this reduction process the lengths decrease (to no more than about 25 μm), the density of surviving nanostructures on a substrate decreases, and the diameters of the surviving nanostructures have a range, of about 20-100 nm. The resulting nanowires are substantially pure Cu and can be oriented laterally (for local or global interconnects) or can be oriented vertically (for standard vertical interconnects).
申请公布号 US8834597(B1) 申请公布日期 2014.09.16
申请号 US201213485721 申请日期 2012.05.31
申请人 The United Stated of America as Represented by the Administrator of the National Aeronautics & Space Administration (NASA) 发明人 Han Jin-Woo;Meyyappan Meyya
分类号 C22B15/00;B82Y10/00;H01J1/00;H01J1/304 主分类号 C22B15/00
代理机构 代理人 Schipper John F.;Menke Christopher J.;Padilla Robert M.
主权项 1. A method for fabricating small diameter nanowires of metallic Cu, the method comprising: providing an array of Cu-containing structures, having diameters that are no greater than 1 mm and containing at least one oxide of Cu; exposing the array to a gas or vapor containing at least one of H and H2 at a gas temperature of about 400° C. or higher, for a time interval length at least about 30 min.; allowing the array to react with the gas and to become reduced so that at least one of the Cu-containing structures containing at least one oxide of Cu becomes approximately pure Cu with a diameter in a range 20-100 nm; providing a substrate of copper having at least one exposed surface; heating the substrate to a temperature of about 400° C. or higher for a time interval of length about 30 min. or higher, and allowing formation on the substrate of at least one structure, having a diameter in a range of about 20-100 nm and having at least one molecule of Cu2O or CuO, on the substrate; orienting said Cu-containing structures in said array in a vertical direction that is approximately perpendicular to a surface of said substrate; and implementing at least one of said vertically oriented Cu-containing structures as a vertical interconnect in a circuit.
地址 Washington DC US