Metal-on-metal (MoM) capacitors having laterally displaced layers, and related systems and methods

摘要

Metal-on-Metal (MoM) capacitors having laterally displaced layers and related systems and methods are disclosed. In one embodiment, a MoM capacitor includes a plurality of vertically stacked layers that are laterally displaced relative to one another. Lateral displacement of the layers minimizes cumulative surface process variations making a more reliable and uniform capacitor.

主权项

1. A metal-on-metal (MoM) capacitor, comprising:
a first metal layer comprising a first plurality of conductive parallel segments having a first width and forming at least a portion of a first electrical conductor providing a first node of the MoM capacitor; and a second metal layer comprising a second plurality of parallel segments, the second metal layer disposed vertically on the first metal layer, the second metal layer forming at least a portion of a second electrical conductor thereby forming the MoM capacitor, wherein the first plurality of conductive parallel segments is laterally displaced by at least one third of the first width relative to the second plurality of parallel segments.