Reversal lithography approach by selective deposition of nanoparticles

摘要

A novel reversal lithography process without etch back is described. The reversal material comprises nanoparticles that are selectively deposited into the gaps between features without overcoating the tops of the features. As a result, a patterned imaging layer can be removed using solvent, blanket exposure followed by developer washing, or dry etching directly, without an etch-back process, and the original bright field lithography pattern can be reversed into dark field features, and transferred into subsequent layers using the nanoparticle reversal material as an etch mask.

主权项

1. A method of forming a microelectronic structure, said method comprising:
(a) providing a wafer stack, said stack comprising:
a substrate having a surface;one or more intermediate layers optionally formed on the substrate surface; anda patterned imaging layer on the intermediate layers, if present, or on the substrate surface if no intermediate layers are present, wherein said patterned imaging layer comprises a plurality of features, said features each being defined by sidewalls and a top surface; (b) applying a pattern reversal composition to said patterned imaging layer to form a pattern reversal mask, wherein said pattern reversal composition is substantially non-polymeric, said composition comprising nanoparticles dispersed in a solvent system, wherein said nanoparticles are selectively deposited between said features during said applying and adjacent said sidewalls without overcoating said top surfaces; (c) removing said patterned imaging layer to yield a reversed pattern comprising said mask; and (d) transferring said reversed pattern into said intermediate layers, if present, or into said substrate if no intermediate layers are present.