| 主权项 |
1. A semiconductor light emitting device, comprising:
a substrate; a first epitaxial structure over the substrate, the first epitaxial structure comprising a first doped layer, a first light emitting layer, and a second doped layer; a first electrode coupled to the first doped layer; a second electrode coupled to the second doped layer that faces the same direction as the first electrode; a second epitaxial structure comprising a third doped layer, a second light emitting layer, and a fourth doped layer; a third electrode coupled to the third doped layer that faces the same direction as the first electrode; a fourth electrode coupled to the fourth doped layer that faces the same direction as the first electrode; an adhesive layer between the first epitaxial structure and the second epitaxial structure and; a wavelength-conversion layer positioned over the first epitaxial structure and the second epitaxial structure, wherein the wavelength-conversion layer comprises red and/or orange phosphors that generate converted light responsive to irradiation by the first epitaxial structure and/or the second epitaxial structure, and wherein the first light emitting layer emits green light, the second light emitting layer emits blue light, and the converted light combined with the green light and blue light is substantially white light. |
