发明名称 |
Optoelectronic component, device comprising a plurality of optoelectronic components, and method for the production of an optoelectronic component |
摘要 |
Disclosed is an optoelectronic component (1) comprising a semiconductor function region (2) with an active zone (400) and a lateral main direction of extension, said semiconductor function region including at least one opening (9, 27, 29) through the active zone, and there being disposed in the region of the opening a connecting conductor material (8) that is electrically isolated (10) from the active zone in at least in a subregion of the opening. Further disclosed are a method for producing such an optoelectronic component and a device comprising a plurality of optoelectronic components. The component and the device can be produced entirely on-wafer. |
申请公布号 |
US8835937(B2) |
申请公布日期 |
2014.09.16 |
申请号 |
US200510588167 |
申请日期 |
2005.02.18 |
申请人 |
Osram Opto Semiconductors GmbH |
发明人 |
Wirth Ralph;Brunner Herbert;Illek Stefan;Eissler Dieter |
分类号 |
H01L33/00;H01L31/0224;H01L33/38 |
主分类号 |
H01L33/00 |
代理机构 |
Fish & Richardson P.C. |
代理人 |
Fish & Richardson P.C. |
主权项 |
1. An optoelectronic component, comprising:
a semiconductor function region with an active zone and a lateral main direction of extension, wherein said semiconductor function region is provided with at least one opening extending through said active zone in a direction orthogonal to the main direction, wherein the semiconductor function region with the active zone is a radiation-emitting or radiation-receiving component, and wherein the active zone is configured to generate at least one of electroluminescent radiation and an electrical signal when incident radiation generates charge carriers in the active zone; a connecting conductor material that is disposed in the region of said opening and electrically isolated from said active zone at least in a subregion of said opening; a carrier, wherein the semiconductor function region is supported by the carrier; and a mirror layer arranged between the semiconductor function region and the carrier, wherein the opening penetrates through the mirror layer; and wherein the opening is completely surrounded and bounded in the lateral direction by the mirror layer in a region where the opening penetrates through the mirror layer. |
地址 |
Regensburg DE |