发明名称 |
Semiconductor stacked package and method of fabricating the same |
摘要 |
A method of fabricating a semiconductor stacked package is provided. A singulation process is performed on a wafer and a substrate, on which the wafer is stacked. A portion of the wafer on a cutting region is removed, to form a stress concentrated region on an edge of a chip of the wafer. The wafer and the substrate are then cut, and a stress is forced to be concentrated on the edge of the chip of the wafer. As a result, the edge of the chip is warpaged. Therefore, the stress is prevented from extending to the inside of the chip. A semiconductor stacked package is also provided. |
申请公布号 |
US8836134(B2) |
申请公布日期 |
2014.09.16 |
申请号 |
US201313738082 |
申请日期 |
2013.01.10 |
申请人 |
Xintec Inc. |
发明人 |
Lin Po-Shen;Shiu Chuan-Jin;Chen Bing-Siang;Chiang Chen-Han;Chen Chien-Hui;Lin Hsi-Chien;Ho Yen-Shih |
分类号 |
H01L23/48;H01L21/00 |
主分类号 |
H01L23/48 |
代理机构 |
Liu & Liu |
代理人 |
Liu & Liu |
主权项 |
1. A semiconductor stacked package, comprising:
a substrate; and a chip having a first surface attached onto the substrate, a second surface opposing the first surface, and a trace structure formed on the first surface, wherein the trace structure is formed with a warpage portion at a position that extends beyond an edge of the chip. |
地址 |
Jhongli TW |