发明名称 Semiconductor unit
摘要 A semiconductor unit includes an insulation layer, a conductive layer bonded to one side of the insulation layer, a semiconductor device mounted on the conductive layer, a cooler thermally coupled to the other side of the insulation layer, a first bus bar having a bonding surface bonded to the semiconductor device or the conductive layer and a non-bonding surface that is the part of the first bus bar other than the bonding surface, and a second bus bar having a bonding surface bonded to the semiconductor device or the conductive layer and a non-bonding surface that is the part of the second bus bar other than the bonding surface. The second bus bar has a greater ratio of the area of the bonding surface to the area of the non-bonding surface than the first bus bar. The second bus bar has a lower electric resistance than the first bus bar.
申请公布号 US8836103(B2) 申请公布日期 2014.09.16
申请号 US201313954464 申请日期 2013.07.30
申请人 Kabushiki Kaisha Toyota Jidoshokki 发明人 Nishi Shinsuke;Mori Shogo;Otobe Yuri;Kato Naoki
分类号 H01L23/52 主分类号 H01L23/52
代理机构 Sughrue Mion, PLLC 代理人 Sughrue Mion, PLLC
主权项 1. A semiconductor unit, comprising: an insulation layer; a conductive layer bonded to one side of the insulation layer; a semiconductor device mounted on the conductive layer; a cooler thermally coupled to the other side of the insulation layer; a first bus bar having a bonding surface bonded to the semiconductor device or the conductive layer and a non-bonding surface that is the part of the first bus bar other than the bonding surface; and a second bus bar having a bonding surface bonded to the semiconductor device or the conductive layer and a non-bonding surface that is the part of the second bus bar other than the bonding surface, the second bus bar having a greater ratio of the area of the bonding surface to the area of the non-bonding surface than the first bus bar, wherein the second bus bar has a lower electric resistance than the first bus bar.
地址 Aichi JP