发明名称 Photo-detecting device and method of making a photo-detecting device
摘要 A photo-detecting device including a plurality of pixels, each including at least one alternate stack of photodiodes and electrically conducting electrodes. Each photodiode includes one intrinsic amorphous semiconductor layer in contact with one doped amorphous semiconductor layer distinct from the amorphous semiconductor layers in other photodiodes, and is arranged between two electrodes. Each pair of photodiodes includes one of the electrodes arranged between photodiodes. In each pixel: each electrode includes an electrically conducting portion not superposed on other electrodes of the pixel and electrically connected to one interconnection hole filled with an electrically conducting material; and portions of an electrically conducting material are superposed approximately on each of non-superposed portions of electrodes.
申请公布号 US8835924(B2) 申请公布日期 2014.09.16
申请号 US201013381435 申请日期 2010.07.05
申请人 Commissariat a l'energie atomique et aux energies Alternatives 发明人 Gidon Pierre;Giffard Benoit;Moussy Norbert
分类号 H01L29/04;H01L27/146;H01L31/0224 主分类号 H01L29/04
代理机构 Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A photo-detecting device comprising: a plurality of pixels, each pixel comprising at least one alternate stack of plural photodiodes and plural electrodes including an electrically conducting material, and wherein: each photodiode comprises at least one intrinsic amorphous semiconductor layer arranged in contact with at least one doped amorphous semiconductor layer distinct from the amorphous semiconductor layers in other photodiodes, each photodiode being arranged between at least two of the electrodes, and each pair of photodiodes comprising at least one of the electrodes arranged between the photodiodes; in each pixel, each electrode comprises at least one portion of electrically conducting material not superposed on other electrodes and electrically connected to at least one interconnection hole passing through the amorphous semiconductor layers and the portion not superposed on the other electrodes, the interconnection hole being filled with at least one electrically conducting material; in each pixel, portions of an electrically conducting material are superposed approximately on each of the portions of electrodes not superposed on other electrodes of the pixel and arranged above the amorphous semiconductor layers.
地址 Paris FR