| 发明名称 | Lithography process and structures | ||
| 摘要 | A photo resist layer includes a first region and a second region. A treatment layer is applied to the photo resist layer. | ||
| 申请公布号 | US8835103(B2) | 申请公布日期 | 2014.09.16 |
| 申请号 | US201213548509 | 申请日期 | 2012.07.13 |
| 申请人 | Macronix International Co., Ltd. | 发明人 | Yang Chin Cheng |
| 分类号 | G03F7/26 | 主分类号 | G03F7/26 |
| 代理机构 | Baker & McKenzie LLP | 代理人 | Baker & McKenzie LLP |
| 主权项 | 1. A method, comprising: forming a photo resist layer having a first region and a second region; exposing the photo resist layer with a mask; and applying a treatment layer to the photo resist layer, wherein the second region contains substantially no photo acid after exposure, and wherein the second region forms a feature. | ||
| 地址 | TW | ||