High light extraction efficiency nitride based light emitting diode by surface roughening

摘要

A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.

主权项

1. A method for fabricating a III-nitride light emitting diode (LED), comprising:
texturing at least one surface of a III-nitride substrate of the LED that is oriented along a semipolar or nonpolar plane to form a textured surface for increasing light extraction efficiency through the textured surface, further comprising creating at least one feature on the textured surface with at least one sloped sidewall, which transmits the light into an external medium at an interface and reflects the light at the interface, wherein the reflected light, after undergoing subsequent reflections inside the feature, has an increased incidence angle at the interface and consequently an increased chance of being transmitted to the external medium.