| 主权项 |
1. An optical device comprising:
a gallium and nitrogen containing substrate member having a semipolar crystalline surface region, the gallium and nitrogen containing substrate member having a thickness of less than 500 microns, the gallium and nitrogen containing substrate member characterized by a dislocation density of less than 107 cm−2; the semipolar crystalline surface region having a root mean square surface roughness of 10 nm or less over a 5 micron by 5 micron analysis area; an offcut characterizing the semipolar crystalline surface region; a gallium and nitrogen containing n-type cladding layer overlying the semipolar crystalline surface region, the gallium and nitrogen containing n-type cladding layer having a thickness from 300 nm to 6000 nm with an n-type doping level of 1E17 cm−3 to 3E18 cm−3; an n-side separate confining heterostructure (SCH) waveguide layer overlying the gallium and nitrogen containing n-type cladding layer, the n-side SCH waveguide layer comprised of at least gallium, indium, and nitrogen with molar fraction of InN of between 1% and 8% and having a thickness from 20 nm to 150 nm; a multiple quantum well active region overlying the n-side SCH waveguide layer, the multiple quantum well active region comprising two to five InGaN quantum wells having a thickness from 2.0 nm to 4.5 nm and being separated by gallium and nitrogen containing barrier layers having a thickness from 3.5 nm to 20 nm; a p-side guide layer overlying the multiple quantum well active region, the p-side guide layer comprised of GaN or InGaN and having a thickness from 10 nm to 120 nm; a p-type gallium and nitrogen containing cladding layer overlying the multiple quantum well active region, the p-type gallium and nitrogen containing cladding layer having a thickness from 300 nm to 1000 nm with a p-type doping level of 1E17 cm−3 to 5E19 cm−3; a p++ gallium and nitrogen containing contact layer overlying the p-type gallium and nitrogen containing cladding layer, the p++ gallium and nitrogen containing contact layer having a thickness from 10 nm to 120 nm with a p-type doping level of 1E19 cm−3 to 1E22 cm−3; a waveguide member, the waveguide member being aligned substantially in a projection of the c-direction, the waveguide region comprising a first end and a second end; a first facet formed on the first end; and a second facet formed on the second end. |
