Single layer complementary memory cell

摘要

A single layer complementary memory cell includes a conductive base layer, a memristive matrix layer disposed onto the base layer, the memristive matrix comprising distinct memristive devices formed within. The memory cell further includes conductive lines disposed onto the memristive matrix that connect to the distinct memristive devices such that the distinct memristive devices form a mutually complementary relation to each other.

主权项

1. A memory device comprising:
a conductive base layer; a single memristive matrix layer disposed onto said base layer, said memristive matrix comprising distinct memristive devices; and conductive lines disposed onto said memristive matrix that connect to said distinct memristive devices such that multiple distinct memristive devices are grouped together and connected so as to form a single memory cell.