| 摘要 |
<p>These compound semiconductor ultrafine particles consist of sulfides having a Cu component, a Zn component and an Sn component as the main components, and, defining x as the composition ratio of the Cu component to the total of the Zn component and the Sn component and y as the composition ratio of the Zn component to the Sn component, (x, y) is in a region surrounded by A (0.75, 1.04), B (0.85, 0.86), C (0.92, 0.79) and D (1.00, 0.72). The average particle diameter is preferably less than 5nm. The thin film of these compound semiconductor ultrafine particles is used as a light-absorbing layer material of photoelectric conversion devices such as solar cells. By this means, CZTS compound semiconductor ultrafine particles having excellent photoelectric conversion characteristics suitable for application to various types of photoelectric conversion devices are achieved, as well as an ultrafine particle thin film using said compound semiconductor ultrafine particles, and a photoelectric conversion device comprising a light-absorbing layer formed with the ultrafine particle thin film.</p> |
