发明名称 REDUCING INSERTION LOSS IN LNA BYPASS MODE BY USING A SINGLE-POLE-TRIPLE-THROW SWITCH IN A RF FRONT END MODULE
摘要 <p>A microwave radio frequency (RF) front end module (FEM) having a low noise amplifier (LNA) with a bypass mode uses a single-pole-triple-throw RF switch that reduces insertion loss to about 1 dB and thereby improves RF receiver sensitivity over existing technology two series connected single-pole-double throw RF switches. The single-pole- triple-throw RF switch may be three metal oxide semiconductor field effect transistor (MOSFET) RF switches that may be arranged with a common source input and isolated independent drain outputs. The RF switches may be single, double or triple gate MOSFET RF switches. The MOSFET RF switches may also be configured as complementary metal oxide semiconductor (CMOS) field effect transistor (FET) RF switches.</p>
申请公布号 WO2014137776(A1) 申请公布日期 2014.09.12
申请号 WO2014US19223 申请日期 2014.02.28
申请人 MICROCHIP TECHNOLOGY INCORPORATED 发明人 KOK, YON-LIN
分类号 H04B1/00;H04B1/40 主分类号 H04B1/00
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