COMPOUND-SEMICONDUCTOR THIN-FILM MANUFACTURING METHOD AND MANUFACTURING DEVICE

摘要

The purpose of the present invention is to provide a compound-semiconductor thin-film manufacturing method and manufacturing device whereby, when manufacturing a I-III-VI or I-II-IV-VI compound-semiconductor thin film, crystal growth can be promoted efficiently, forming large-grain compound-semiconductor crystals, and the amounts of the various elements in said compound semiconductor can be controlled. A I-III-VI or I-II-IV-VI compound-semiconductor thin-film formed on the surface of a substrate (6) is heat-treated as follows: said substrate (6) is heated so as to bring the substrate temperature (T1) to 100-700°C, and a non-oxidizing gas that has been heated to a temperature (T2) higher than the substrate temperature (T1) is circulated through a chamber (1).